PART |
Description |
Maker |
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor 40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
PTF10149 |
70 Watts, 92160 MHz GOLDMOS Field Effect Transistor 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10138 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10020 |
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson
|
PE6815 PE6815-16 |
2 Watts Low Power Precision WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫,200レ拧脉冲10职务
|
MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
|
PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦,1.78-1.92 GHz射频功率晶体 5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PH1214-25M |
Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10% Duty 雷达脉冲功率晶体 25瓦特.20-1.40千兆赫,150毫秒脉冲0%的
|
Vishay Intertechnology, Inc. MACOM[Tyco Electronics]
|
2F-10 |
up to 3 GHz 2 Watts
|
Inmet Corporation
|
PE6804 |
1.5 Watts WR-62 RF Load Up To 18 GHz
|
Pasternack Enterprises, Inc.
|